HN2C01FE 2007-11-01 1 toshiba transistor silicon npn epitaxial type (pct process) HN2C01FE audio frequency general purpos e amplifier applications z small package (dual type) z high voltage and high current : v ceo = 50v, i c = 150ma (max) z high h fe : h fe = 120~400 z excellent h fe linearity : h fe (i c = 0.1ma) / (i c = 2ma) = 0.95 (typ.) absolute maximum ratings (ta = 25c) (q1, q2 common) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c * 100 mw junction temperature t j 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * total rating electrical characteristics (ta = 25c) (q1, q2 common) characteristic symbol test circuit test condition min typ. max unit collector cut-off current i cbo D v cb = 60v, i e = 0 D D 0.1 a emitter cut-off current i ebo D v eb = 5v, i c = 0 D D 0.1 a dc current gain h fe (note) D v ce = 6v, i c = 2ma 120 D 400 D collector-emitter saturation voltage v ce (sat) D i c = 100ma, i b =10ma D 0.1 0.25 v transition frequency f t D v ce = 10v, i c = 1ma 60 D D mh z collector output capacitance c ob D v cb = 10v, i e = 0, f = 1mh z D 2 D pf note: h fe classification y(y): 120~240, gr(g): 200~400 ( ) marking symbol marking equivalent circuit (top view) 1.emitter1 2.emitter2 3.base2 4.collector2 5.base1 6.collector1 (e1) (e2) (b2) (c2) (b1) (c1) jedec D jeita D toshiba 2-2n1a weight: 3mg unit: mm 1 2 3 4 5 6 l1y type name h fe rank
HN2C01FE 2007-11-01 2 (q1, q2 common) ambient temperature ta ( c) p c * ? ta collector power dissipation p c (mw) 200 0 175 125 100 50 150 75 25 150 0 50 100 *:total rating
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and (b) the instructions for the application that produc t will be used with or for. customers are solely responsible for all aspects of their own product design or app lications, including but not limited to (a) determining the appropriateness of the us e of this product in such design or applications; (b ) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating a ll operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specific applications as expressly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or relia bility and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ( ?unintended use?). unintended use includes, without limitation, equipment us ed in nuclear facilities, equipment used in the aerospace indus try, medical equipment, equipment used for automobiles, trains, ship s and other transportation, traffic signaling equipment, equipme nt used to control combustions or explosions, safety devices, elevators and escalators, devic es related to electric power, and equipmen t used in finance-related fields. do not use product for unintended use unless specifically permitted in this document. ? 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